X-band High Power Amplifier
Bonding recommendations
CHA7012
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF, DC and modulation port inter-connections should be done according to the following
table:
Port
Connection
IN (1)
OUT (12)
DC pads to 1
st
decoupling level
for double bonding
DC pads to 1
st
decoupling level
for single bonding
st
nd
1 decoupling level to 2
decoupling level for double
bonding
st
nd
1 decoupling level to 2
decoupling level for single
bonding
Inductance (Lbonding) = 0.3nH
400µm length with wire diameter of 25 µm
Inductance (Lbonding) = 0.3nH
400µm length with wire diameter of 25 µm
Inductance (Lbonding) =0.7nH
Two 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =1nH
One 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =0.7nH
Two 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =1nH
One 1.2mm length wires with a diameter of 25 µm
Assembly recommendations in test fixture
(using TTL circuits)
Vc*
TI*
100pF
IN
OUT
Non capacitive pad
10nF
1µF
TI*
100µF
Vc*
* Performances obtained with the same accesses connected to the same supply
Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred.
Ref. : DSCHA70129082- 23 March 09
9/10
Specifications subject to change without notice
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UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
