CHA7012
3
2.9
2.8
2.7
2.6
Ic (A)
2.5
2.4
2.3
2.2
2.1
2
-1
0
1
2
3
4
X-band High Power Amplifier
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
5
6
7
8
Compression (dB)
Collector current @ 25° versus compression and fr equency
C
Temperatures: -40° 20° +80°
C;
C;
C Vc=7.5V Pul se= 100µs, Duty cycle 20%
3.0
2.8
Vctrl
2.6
2.4
TTL Input Voltage
2.2
2.0
+80 °
C
1.8
20 °
C
1.6
20 °
C
1.4
1.2
+80 °
C
-40 °
C
1.0
-40 °
C
0.8
0.6
0.4
0.2
0.0
Ic (A)
0
1
2
TI/Vctrl (V)
3
4
5
6
Collector quiescent current versus TI & Vctrl and temperature
Ref. : DSCHA70129082- 23 March 09
6/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
