X-band High Power Amplifier
Typical measured characteristics
CHA7010
Measurements in test fixture :
Tamb=25°C, Vc=9V, Ic (Quiescient) = 2.4A, Pulse width=80µs , Duty cycle = 30%
20
16
12
S21, S11, S22 (dB)
8
4
0
-4
-8
-12
-16
-20
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency(GHz)
db(S21)
db(S11)
db(S22)
S-parameters
42
40
38
Output power (dBm)
36
34
32
30
28
26
24
22
-1
0
1
2
3
4
Compression level (dB)
Pout @ 8,4 GHz
Pout @ 8,6 GHz
Pout @ 8,8 GHz
Pout @ 9 GHz
Pout @ 9.2 GHz
Pout @ 9.4 GHz
Pout @ 9.6 GHz
Pout @ 9.8 GHz
Pout @ 10 GHz
Pout @ 10.2 GHz
Pout @ 10.4 GHz
5
6
7
Output power versus compression level : F= 8.4 to 10.4GHz
Ref. DSCHA70104054 - 23 Feb 04
3/7
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
