X-band High Power Amplifier
Electrical Characteristics
CHA7010
Tamb = 25°C, Vc=9V, Ic (Quiescient) = 2.4A, Pulse width=80µs , Duty cycle = 30%
Symbol
F_op
G_lin_1
G_lin_2
G_lin_T
RL_in
RL_out
P_sat_1
P_sat_2
P_sat_T
P_1dBc_1
P_1dBc_2
PAE_sat
PAE_1dBc
Vc
Ic
Vctr
Zctr
Top
Parameter
Operating frequency
Linear gain (8.4 to 9.4GHz)
Linear gain (9.4 to 10.4GHz)
Linear gain variation versus temperature
Input Return Loss
Output Return Loss
Saturated output power (8.4 to 9.8GHz)
Saturated output power (9.8 to 10.4GHz)
Saturated output power variation versus
temperature
Output power @ 1dBc (8.4 to 9.8GHz)
Output power @ 1dBc (9.8 to 10.4GHz)
Power Added Efficiency in saturation
Power Added Efficiency @ 1dBc
Power supply voltage
Power supply quiescent current (1)
Collector current control voltage (2)
Vctr input port impedance (3)
Operating temperature range (4)
Min
8.4
14
16
8
6
39
38
Typ
9.4
16
18
-0.035
12
12
40
39
-0.01
39
38
35
32
9
2.4
5.1
350
Max
10.4
Unit
GHz
dB
dB
dB/°C
dB
dB
dBm
dBm
dB/°C
dBm
dBm
%
%
V
A
V
Ohm
°C
38
37
30
-30
+70
(1)
(2)
(3)
(4)
This parameter is fixed by Vctr
Control voltage pulsed is recommanded.
This value corresponds to the 4 ports in parallel (Pin 3, 8, 16, 21)
The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Tamb = 25°C
Symbol
Cmp
Vc
Ic
Ic_sat
Vctr
Tstg
(1)
(2)
Parameter
Compression level (2)
Power supply voltage
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Storage temperature range
Values
6
10
2.8
3.5
6.5
-55 to +125
Unit
dB
V
A
A
V
°C
Operation of this device above anyone of these parameters may cause permanent damage.
For higher compression the level limit can be increased by decreasing the voltage Vc using the rate
0.5 V / dBc
Ref. DSCHA70104054 - 23 Feb 04
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
