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CHA6558-99F00 参数 Datasheet PDF下载

CHA6558-99F00图片预览
型号: CHA6558-99F00
PDF下载: 下载PDF文件 查看货源
内容描述: 28-32GHz HPA 2W [28-32GHz HPA 2W]
分类和应用:
文件页数/大小: 10 页 / 573 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA6558-99F
28-32GHz HPA 2W
Recommended Chip assembly & Bonding Diagram
-For best thermal and electrical performances, the chip should be brazed on a metal base
plate.
The RF and DC connections should be done according to the following table:
- DC drain voltage (Pads: D*): Connection of all the pads is mandatory excepted Pad D2
which can be used on one side only. (Pin number 5 or 19)
-DC gate voltage: (Pads G*): Connection of all the pads is mandatory excepted Pads G2 &
G3 (Pin number 4 or 20 for G2 & Pin number 7 or 17 for G3) which can be used on one side
only.
Note: Connection of the pin 19 (other possibility to connect D2) is not mandatory if
connection of pin 5 has been used, nevertheless it is necessary to add the 120pF and 10nF
external capacitor.
Recommended circuit bonding table
Connection
External capacitor
Inductance (Lbonding) = 0.3nH
IN
2 gold wires with diameter of 25µm (550µm max)
Inductance (Lbonding) = 0.3nH
OUT
2 gold wires with diameter of 25µm (550µm max)
G*
C1 ~ 120pF, C2 ~ 10nF
Inductance
1nH
D*
(
1)
C1 ~ 120pF, C2 ~ 10nF
Inductance
1nH
(1)
2 gold wires with diameter of 25µm are necessary to connect D4
Port
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
8/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09