CHA6558-99F
Electrical Characteristics
28-32GHz HPA 2W
Tamb = +25°C, Vd = +6V Vg adjusted for quiescent current =1.4A
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Operating frequency range
28
32
GHz
G
Small signal gain
21
dB
P1dB
Output power @ 1dB compression
33.2
dBm
Psat
Saturated output power
33.4
dBm
PAE
Power added efficiency at saturation
23
%
Rlin
Input return loss
-8
dB
Rlout
Output return loss
-6
dB
Id
Supply quiescent drain current
1.4
A
Id_sat
Drain current @ saturation
1.8
A
Vg
Negative gate voltage (G1,G2,G3,G4 pads)
≈-0.5
V
These values are representative of on test fixture measurements a bonding wire of typically
0.3nH at the RF ports.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Cmp
Gain compression level
5
dB
Vd
Drain bias voltage ( D1,D2 ,D3 ,D4)
7
V
Id
Supply quiescent current
1.6
A
Vg
Gate bias voltage
-2 to -0.2
V
(2)
Pin
Maximum peak input power overdrive
+18
dBm
Tj
Junction temperature
(3)
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) Thermal Resistance channel to ground paddle = 6.2°C/W for T= +85°C.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad N
o
Parameter
Vd
D1,D2,D3,D4
DC drain Voltage
Id
DC Drain current controlled with vg
Vg
G1,G2,G3,G4
DC gate Voltage
(1)
To be adjusted until to obtain Id:1.4A
Values
6
1.4
≈-0.5
(1)
Unit
V
A
V
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
2/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
