5 - 18 GHz High Power Amplifier
Assembly recommendations
CHA6518
C2
C2
C1
C1
C1
C1
Vg
Lbonding
Vd
Lbonding
C1
C1 C1
C1
C1
C2
C2
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF, DC and modulation port inter-connections should be done according to the following
table:
Port
Connection
External capacitor
IN (17)
Inductance (Lbonding) = 0.3nH
OUT (9)
Inductance (Lbonding) = 0.3nH
VD (2, 5, 8, 10, 13)
Inductance
≤
1nH
VG (3, 6, 12, 15)
Inductance
≤
1nH
C1 ~ 100pF
C2 ~ 100nF
C1 ~ 100pF
C2 ~ 100nF
Ref. DSCHA65185007 - 7 Jan 05
7/8
Specifications subject to change without notice
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UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
