CHA6518
Electrical Characteristics
5 - 18 GHz High Power Amplifier
Tamb = 25° (2), Vd=8V, Ic (Quiescient) = 1A, CW bi asing mode
C
Symbol
F_op
G_lin_1
G_lin_T
RL_in
RL_out
P_sat_1
P_sat_2
P_sat_3
P_sat_4
P_sat_5
P_sat_6
P_sat_7
PAE_sat
Vd
Id
Vg
Top
NF
Parameter
Operating frequency
Linear gain
Linear gain variation versus temperature
Input Return Loss
Output Return Loss
Saturated output power (5 to 6 GHz)
Saturated output power (6 to 7 GHz)
Saturated output power (8 to 10 GHz)
Saturated output power (11 to 12 GHz)
Saturated output power (13 to 14 GHz)
Saturated output power (15 to 17 GHz)
Saturated output power (18 GHz)
Power Added Efficiency in saturation
Positive supply voltage
Power supply quiescent current (1)
Negative supply voltage
Operating temperature range (2)
Noise Figure
24
-
0.045
5.5
10
3.5
10
32.5
33
33
34
32.5
33
32
32.5
32.5
33
33
34
32
32.5
11
20
8
1
-0.8
-30
5
Min
5
20
Typ
Max
18
+80
Unit
GHz
dB
dB/°
C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
%
V
A
V
°
C
dB
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Symbol
Pin (2)
Vd (2)
Id (2)
Ig
(2)
Pd (2)
Tj
Tstg
(1)
(2)
Parameter
Input continuous power
Positive supply voltage without RF power
Positive supply quiescent current
Gate supply current
Power dissipation
Junction temperature
Storage temperature range
Values
17
9
1.5
88
13.5
175
-55 to +125
Unit
dBm
V
A
mA
W
°
C
°
C
Operation of this device above anyone of these parameters may cause permanent damage.
These values are specified for Tamb = 25°
C
Ref. : CHA6518-99F-Prel-5007.doc – 07/08/2009
2/8
Specifications subject to change without notice
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UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
