CHA6042
13-16GHz High Power Amplifier
Predicted Output Power at 1dB Gain Compression
36
OUTPUT POWER (P-1dB) (dBm)
35
34
33
32
31
30
29
28
27
26
12
13
14
15
16
17
FREQUENCY (GHz)
Absolute Maximum Ratings
Tamb. = 25
°C
(1)
Symbol
Vds
Ids
Vgs
Vdg
Pin
Ta
Tstg
Parameter
Drain bias voltage_small signal
Drain bias current_small signal
Gate bias voltage
Maximum Drain Gate voltage (Vd-Vg)
Maximum peak input power overdrive (2)
Operating Temperature Range (3)
Storage Temperature Range
Values
10.5
1500
-2 to +0.4
+12
+18
-45 to +80
-55 to +125
Unit
V
mA
V
V
dBm
C
C
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Duration < 1 s
3. AuSn solder mount to CuW or CuMo carrier assumed
Ref. : DSCHA6042218 - 06-Aug.-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
