24-30GHz Medium Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 5V Id=460mA
Symbol
Fop
G
∆G
Is
P1dB
IP3
PAE
VSWRin
VSWRout
Id
CHA5390
Parameter
Operating frequency range
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation
Pulsed output power at 1dB compression (1)
3 order intercept point
Power added efficiency at saturation
Input VSWR
Output VSWR
Bias current
rd
Min
24
21 (2)
Typ
Max
30
Unit
GHz
dB
dB
dB
dBm
dBm
%
24 (2)
±2
50
24
25
33
16
3.0:1
3.0:1
460
720
mA
(1) On Wafer measurements
(2) [26-29 GHz]: 24dB min [24-31 GHz]: 21dB min
For Tj<175°C ( 80°C ambient ), Id should be below 475mA under 5V bias.
Current source biasing network is recommended.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Pin
Ta
Tstg
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Parameter
Values
6.0
720
-2.0 to +0.4
+15
-40 to +85
-55 to +155
Unit
V
mA
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : CHA53901012 - 12-Jan.-01
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
