CHA5390
24-30GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5390 is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military
to
commercial
communication
systems. The backside of the chip is both RF
and DC grounded. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Typical in JIG measurements :
15
30
10
25
5
20
Main Features
•
•
•
•
•
•
Broadband performances : 24-30GHz
25dBm output power.
24dB gain
Good broadband matchings
Low DC power consumption, 460mA @ 5V
Chip size : 2.99 X 1.31 X 0.10 mm
0
15
-5
10
-10
5
-15
0
-20
-5
-25
22
24
26
28
Frequency (GHz)
30
32
-10
Input Rloss : grey solid line - Output Rloss : dash line.
Main Characteristics
Tamb. = 25°C
Parameter
Min
Typ
Max
Unit
Fop
G
P01
Id
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
24
21
24
24
25
460
30
GHz
dB
dBm
720
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : CHA53901012 - 12-Jan.-01
1/
8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
