37-40GHz High Power Amplifier
Chip Assembly and Mechanical Data
CHA5297
To Vd1,2 DC Drain supply feed To Vd3 DC Drain supply feed
10nF
10nF
120pF
120pF
120pF
120pF
RF IN
RF OUT
120pF
120pF
120pF
120pF
10nF
10nF
To Vg1,2,3 DC Gate supply feed
To Vd3 DC Drain supply feed
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 50µm. All dimensions are in micrometers )
Ref. : DSCHA52972149 - 29-May-02
3/4
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
