CHA5297
37-40GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5297 is a three-stage monolithic high
power amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vd1
Vd2
Vg3
Vd3
IN
OUT
Vg1
Vg2
Vd2
Vg3
Vd3
Main Features
■
Performances : 37-40GHz
■
28dBm output power @ 1dB comp. gain
■
10 dB
±
1dB gain
■
DC power consumption, 1.6A @ 3.5V
■
Chip size : 4.16 x 2.6 x 0.05 mm
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
Min
37
Typ
10
28
1.6
Max
40
Unit
GHz
dB
dBm
A
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52972149 - 29-May-02
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
