CHA5296
Electrical Characteristics
Tamb = +25°
C
Symbol
Fop
G
∆G
Is
P1dB
P03
IP3
PAE
VSWRin
27-30GHz High Power Amplifier
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression (1)
3
rd
order intercept point (2)
Power added efficiency at Psat
Input VSWR (2)
Min
27
16
Typ
Max
30
Unit
GHz
dB
dB
dB
dBm
dBm
dBm
%
18
±1
50
28
29
29
30
38
12
16
5:1
2.5:1
6
850
1000
VSWRout Output VSWR (2)
Vd
Id
Drain bias voltage
Bias current @ small signal
V
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25° (1)
C
Symbol
Vd
Id
Vg
Vgd
Pin
Tch
Ta
Tstg
Drain bias current
Gate bias voltage
Negative gate drain voltage ( = Vg - Vd)
Maximum peak input power overdrive (2)
Maximum channnel temperature
Operating temperature range
Storage temperature range
Parameter
Drain bias voltage
Values
6.5
1450
-2.5 to +0.4
-8
+18
175
-40 to +80
-55 to +125
Unit
V
mA
V
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52967144 - 24 May 07
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
