CHA5296
RoHS COMPLIANT
27-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5296 is a high gain three-stage
monolithic high power amplifier. It is designed
for a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps to simplify the assembly process.
The circuit is manufactured with a P-HEMT
process on 50µm substrate thickness, 0.25µm
gate length, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
20
Gain & RLosses (dB)
15
10
5
0
-5
-10
-15
-20
20
22
24
26
28
30
Frequency (GHz)
32
34
36
S22
S11
Main Features
■
■
■
■
■
Performances: 27-30GHz
29dBm output power @ 1dB comp. gain
18 dB
±
1dB gain
DC power consumption, 850mA @ 6V
Chip size: 3.80 x 2.52 x 0.05 mm
Typical on jig Measurements
Main Characteristics
Tamb. = 25°
C
Symbol
Fop
G
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
Min
27
16
28
Typ
18
29
850
Max
30
Unit
GHz
dB
dBm
1000
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52967144 - 24 May 07
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
