5.8 GHz Medium Power Amplifier
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = -5V
Freq.
GHz
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
S11
dB
-9.23
-9.05
-8.84
-8.65
-8.44
-8.25
-8.07
-7.93
-7.89
-7.99
-8.27
-8.64
-9.03
-9.39
-9.73
-10.1
-10.52
-11
-11.56
-12.09
-12.62
-13.05
-13.21
-13.14
-12.77
-12.18
-11.48
-10.65
-9.76
-8.9
-8.03
S11
/
°
5.6
0.4
-5
-10.8
-16.8
-23.2
-30.1
-37.5
-45.4
-53.7
-61.5
-68.7
-74.9
-80.9
-86.6
-92.4
-97.9
-103.1
-107.6
-11.1
-113.2
-114.5
-114.3
-114.1
-114.4
-115.7
-117.9
-121.7
-126.9
-133.7
-141.9
S12
dB
-47.73
-48.42
-48.78
-50.4
-50.72
-51.79
-51.93
-52.56
-52.92
-53.56
-54.49
-55.71
-57.22
-58.74
-60.04
-60.95
-61.36
-61.75
-61.42
-60.99
-60.57
-60.34
-59.89
-59.38
-58.47
-57.61
-56.81
-55.59
-55.19
-54.39
-53.67
S12
/
°
162.4
142.3
129.4
113.1
101.3
88.3
73.9
59.8
41.2
22.4
-0.2
-22.4
-45.7
-69.8
-93.3
-119.4
-144.1
-168
170.3
150.8
134.4
117.6
105.9
93.5
82.1
70.1
59.1
44.2
31.3
17.7
0.7
S21
dB
0.33
2.86
5.44
7.93
10.36
12.76
15.1
17.38
19.49
21.31
22.75
23.74
24.35
24.69
24.83
24.88
24.86
24.77
24.65
24.49
24.33
24.19
24.09
24.03
23.98
24.02
24.09
24.2
24.37
24.52
24.65
S21
/
°
-78.2
-78.2
-89.7
-89.7
-110.2
-110.2
-136.9
-122.7
-171.3
-153.1
146.5
168.2
102.9
124.4
63.8
82.7
29.1
46.1
-2.4
13
-31
-17.1
-57.5
-44.5
-82.9
-70.3
-108.1
-95.4
-134.9
-121.1
-165.1
CHA5215a
S22
dB
-8.28
-7.72
--7.46
-7.22
-6.96
-6.69
-6.38
-6.1
-5.94
-6.03
-6.46
-7.27
-8.33
-9.44
-10.35
-10.93
-11.21
-11.25
-11.13
-10.98
-10.74
-10.54
-10.35
-10.15
-9.92
-9.63
-9.27
-8.79
-8.35
-7.86
-7.4
S22
/
°
105.5
90.6
77.4
-64.7
52.6
52.6
-27.5
13.8
-0.17
-15.9
-30.7
-44
-54.2
-61
-64.5
-66
-66.8
-67.8
-68.9
-70.7
-72.5
-74.4
-76.4
-78.1
-79.2
-80.5
-81.7
-83.3
-85.5
-88.3
-92
Ref. : DSCHA52150160 -08-Jun-00
3/12
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
