CHA5215a
Electrical Characteristics
Tamb = +25°C
Symbol
Fop
Glin
Gdr
Gc
Pout
Sdet
Vref
RLin
RLout
Vd
Id
Vg
Ig
Parameter
Operating frequency range
Linear gain (Gc=-5V)
Gain control dynamic range
Gain control voltage
Saturated output power
5.8GHz Medium Power Amplifier
Test
Conditions
Min.
5
Typ.
5.8
25
Max
7
Unit
GHz
dB
dB
10
-5
15
0
27
-5
550
V
dBm
mV/mW
mV
dB
dB
V
Output power monitor sensitivity
Reference monitor voltage
Input return loss (full band) (2)
Output return loss (2)
Positive supply voltage (1)
Positive supply current
Negative supply voltage
Negative supply current
7
12
6
9
330
-1.4
15
400
mA
V
mA
(1) Depending on the application a trade-off can be obtained between linearity and power
consumption by adjusting the positive supply voltage (from 6 to 9V).
(2) The return loss can be improved by using a simple matching network (available on request).
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Vd
Vg
Gc
Pin
Top
Tstg
Parameter
Positive supply voltage
Negative supply voltage
Gain control voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
10
-6 to 0 (3)
-6 to 0.6
20
-50 to +70
-55 to +155
dBm
°C
°C
Unit
V
V
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
(3) Choose Vg in order to have Id
≤
400mA when Vd is applied
Ref. : DSCHA52150160 -08-Jun-00
2/12
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
