CHA5197a
Electrical Characteristics
21-26.5GHz Medium Power Amplifier
Tamb=+25° Vd=6V Id=550mA
C,
These values are representative of on jig measurements.
Symbol
Fop
G
∆G
Is
P_sat_1
P_sat_2
PAE
NF
VSWRin
Parameter
Operating frequency range
Small signal gain
Small signal gain flatness
Reverse isolation
Saturated output power (21-23 GHz)
Saturated output power (23-26.5 GHz)
Power added efficiency in saturation mode
Noise Figure
Input VSWR
Min
21
Typ
Max
26.5
Unit
GHz
dB
dB
dB
dBm
dBm
%
dB
28
±2
40
27
27.5
17
8
3:1
3:1
550
600
6
-0.4
VSWRout Output VSWR
Id
Id_sat
Vd
Vg
Power Supply @small signal (1)
Power Supply @saturation mode
Positive drain bias voltage
Negative gate bias voltage (2)
mA
mA
V
V
(1) This parameter is fixed by gate voltage Vg
(2) Vg tuned to obtain Id=550mA @Vd=6V and small signal
Absolute Maximum Ratings
Tamb.=25° (1)
C
Symbol
Vd
Id
Vg
Pin
Tch
Ta
Tstg
Parameter
Maximum drain bias voltage without RF
Maximum drain bias current
Gate bias voltage
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
8.0
700
-2.5 to +0.0
10
175
-40 to +80
-55 to +125
Unit
V
mA
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. DSCHA5197a7173 - 22 Jun 07
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
