CHA5051
Electrical Characteristics
Tamb.=25° Vd=4.5V Id=310mA
C,
Symbol
Fop
G
P1dB
P03
NF
VSWRin
7-16GHz Medium Power Amplifier
Parameter
Operating frequency range
Small signal gain
Pulsed output power at 1dB compression
Output power at 3dB gain compression
Noise Figure
Input VSWR
Min
7
Typ
Max
16
Unit
GHz
dB
dBm
dBm
dB
25
25
26
3
2.5:1
2:1
33
29
4.5
310
VSWRout Output VSWR
IP3
Output IP3
from 7 to 13GHz
from 14 to 16GHz
Vd
Id
DC voltage
Bias current
dBm
V
mA
These values are representative for on-wafer measurements that are made without bonding wires at
the RF ports.
Absolute Maximum Ratings
Tamb. = 25° (1)
C
Symbol
Vd
Id
Vg
Pin
Tch
Ta
Tstg
Parameter
Maximum Drain bias voltage
Drain bias current with Vd=4.5V
Gate bias voltage
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
+5
390
-2 to +0.4
+10
+175
-40 to +85
-55 to +125
Unit
V
mA
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA50517152 - 01 Jun 07
2/14
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
