CHA5051
RoHS COMPLIANT
7-16GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5051 is a high gain three-stage
monolithic medium power amplifier. It is
designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both
RF and DC grounds. This helps to simplify
the assembly process.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate.
It is available in chip form
Gain & Return Losses (dB)
30
25
Gain & Return Losses (dB)
20
15
10
5
0
-5
-10
-15
-20
0
5
10
15
Freq (GHz)
20
25
30
S21 (dB)
S11 (dB)
S22 (dB)
Main Features
■
Broadband performance 7-16GHz
■
25dB gain & 3dB noise figure
■
RF ports ESD protected (see page 12)
■
25dBm output power @ 1dB
compression
■
DC power consumption, 310mA @ 4.5V
■
Chip size 2.41 x 1.5 x 0.10mm
Typical on wafer measurement
Main Characteristics
Tamb.=25° Vd=4.5V
C,
Symbol
Fop
Parameter
Operating frequency range
Small signal gain
Noise figure
Output power at 1dB gain compression
Bias current
Min
7
Typ
Max
16
Unit
GHz
dB
dB
dBm
mA
G
NF
P1dB
Id
25
3
25
310
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA50517152 - 01 Jun 07
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0 ) 1 69 33 03 08 – Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
