CHA3693-QDG
Electrical Characteristics*
20-30GHz Medium Power Amplifier
Tamb = +25° Vd= +3,5V Id=330mA
C,
Symbol
Fop
G
∆G
Is
S11
S22
IP3
P1dB
NF
Vd
Id
Parameter
Operating frequency range
Gain
Gain flatness
Reverse isolation
Input return loss
Output return loss
3rd order intercept point (Pin/tone=-10dBm)
Output power at 1dB gain compression
Noise Figure
Drain bias voltage (Lead D & D1)
Drain bias current (small signal)
26.5
17
Min
20
20
21
±1.5
50
-7
-4
27.5
18
8
3.5
330
400
10
-5
-3
±2
Typ
Max
25
Unit
GHz
dB
dB
dB
dB
dB
dBm
dBm
dB
V
mA
Symbol
Fop
G
∆G
Is
S11
S22
IP3
P1dB
NF
Vd
Id
Parameter
Operating frequency range
Gain
Gain flatness
Reverse isolation
Input return loss
Output return loss
3rd order intercept point (Pin/tone=-10dBm)
Output power at 1dB gain compression
Noise Figure
Drain bias voltage (Lead D & D1)
Drain bias current
Min
25
18
Typ
20
±1.5
45
-5
-4
Max
30
Unit
GHz
dB
±2
dB
dB
-3
-3
dB
dB
dBm
dBm
26.5
17
27.5
18
8
3.5
330
400
10
dB
V
mA
*These values are representative of onboard measurements as defined on the drawing 95541 (see
below).
Performances can be optimized thanks to external matching (refer to the “Sub-band enhancement”
section below).
Ref.: DSCHA3693-QDG7268 - 25 Sep 07
2/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
