CHA3666-QAG
Electrical Characteristics
Temp = +25° P1, N2 = GND (1)
C,
Symbol
Fop
G
∆G
NF
IS11I
IS22I
IP3
P1dB
Vd1, 2
Id
Parameter
Operating frequency range
Gain (2)
Gain flatness
Noise figure (2)
Input return loss (2)
Ouput return loss (2)
3rd order intercept point
5.8-17GHz Low Noise Amplifier
Min
5.8
19
Typ
21
±0.5
1.8
2.5:1
2.0:1
26
Max
17
Unit
GHz
dB
dB
2
2.7:1
2.2:1
dB
dBm
dBm
V
100
mA
Output power at 1dB gain comp (2)(3).
Drain bias voltage
Drain bias current
15
16
4
60
80
(1) The other leads are not connected.
(2) These values are representative of on board measurements as defined on the drawing
96272 (see below
).
(3) P1dB can be increased (+0.5dBm) when P1& P2 are connected to ground and the other
leads non-connected. In this case Id is typically of 85mA.
Absolute Maximum Ratings
(1)
Temp = +25°
C
Symbol
Vd
Pin
Top
Tj
Parameter
Drain bias voltage
RF input power
Operating temperature range
Junction temperature
Storage temperature range
Values
4.5
10
-40 to +85
175
Unit
V
dBm
°
C
°
C
Tstg
-55 to +125
°
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. DSCHA3666-QAG8108 - 17 Apr 08
2/12
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
