CHA3666-QAG
RoHS COMPLIANT
5.8-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3666-QAG is a two-stage self-biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in lead-free package.
Gain & NF @Config; P1=N2=grounded
Main Features
■
Broadband performance 6-17GHz
■
1.8dB noise figure
■
26dBm 3
rd
order intercept point
■
16dBm power at 1dB compression
■
21dB gain
■
Low DC power consumption
■
16L-QFN3X3 SMD package
Gain &NF (dB)
24
22
20
18
16
14
12
10
8
6
4
2
0
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Main Characteristics
Temp = +25° Vd1=Vd2= +4V, P1& N2=GND
C,
Symbol
NF
G
IP3
Noise figure
Gain
3rd order intercept point
19
Parameter
Min
Typ
1.8
21
26
Max
2
Unit
dB
dB
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-QAG8108 - 17 Apr 08
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
