20-40GHz Medium Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 3.5V Id=330mA
Symbol
Fop
G
G
∆G
Is
P1dB
P3dB
CHA3093c
Parameter
Operating frequency range (1)
Small signal gain [ 20GHz to 35GHz](1)
Small signal gain (1)
Small signal gain flatness (1) (Any 1GHz BW)
Reverse isolation (1)
Pulsed output power at 1dB gain compression (1)
Pulsed output power at 3dB gain compression (1)
rd
Min
20
20
18
Typ
Max
40
Unit
GHz
dB
dB
22
±0.5
50
18
20
20
22
dB
dB
dBm
dBm
IP3
PAE
VSWRin
VSWRout
NF
Vdet
3 order intercept point
Power added efficiency at saturation
Input VSWR (1)
Output VSWR (1)
Noise figure
Detected voltage : at 25GHz @ Pout=20dBm (2)
Detected voltage : at 38GHz @ Pout=20dBm (2)
Bias current (small signal)
29
10
1.2:1
2.0:1
8.0
0.65
0.45
330
400
2.0:1
3.0:1
10.0
dBm
%
dB
V
V
mA
Id
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports.
(2) In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less.
(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.
Absolute Maximum Ratings (1)
Symbol
Vds
Ids
Vgs
Vdg
Pin
Parameter
Drain bias voltage_small signal (2)
Drain bias current_small signal
Gate bias voltage
Drain Gate voltage (Vds – Vgs)
Maximum continuous input power (2)
Maximum peak input power overdrive (3)
Values
4.0
470
-2 to +0.4
+5
+4 (@ 20GHz)
-1 (@ 40GHz)
+15
-40 to +85
-55 to +125
Unit
V
mA
V
V
dBm
dBm
°C
°C
Ta
Tstg
Operating temperature range
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA30932158 -07-June-02
2/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
