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CHA3023-99F 参数 Datasheet PDF下载

CHA3023-99F图片预览
型号: CHA3023-99F
PDF下载: 下载PDF文件 查看货源
内容描述: 1-18 GHz的宽带放大器 [1-18 GHz WIDE BAND AMPLIFIER]
分类和应用: 放大器
文件页数/大小: 8 页 / 389 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA3023
1-18 GHz Wide Band Amplifier
Chip Assembly and Mechanical Data
Special care should be taken concerning the biasing procedure. Apply Vg before Vd.
Equivalent wire
bonding : 0.15 nH
Equivalent wire
bonding : 0.15 nH
The CHA3023 could be used without Vg2 bias. There is a resistor bridge inside the chip. This
one generates the correct value of Vg2 Bias. Pads G2a and G2 must be connected.
Equivalent RF Wire Bondings: 0.15 nH (typical length of 200µm for a 25µm diameter wire).
Equivalent wire
bonding : 0.15 nH
Equivalent wire
bonding : 0.15 nH
DSCHA30235263 - 20 sep 05
7/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09