CHA3023
RoHS COMPLIANT
1-18 GHz WIDE BAND AMPLIFIER
GaAs Monolithic Microwave IC
Description
The CHA3023 is a travelling wave amplifier
using cascode FET. It is designed for a wide
range of applications.
The circuit is manufactured with a PHEMT
process of 0.25µm gate length, via holes
through the substrate and air bridges and it
is available in die form.
15
10
Gain & RLoss
5
0
-5
-10
-15
-20
1
3
5
7
9
11
13
15
17
19
Frequency (GHz)
dBS11
dBS22
dBS21
Main Features
■
Broadband performances : 1-18 GHz
■
14dB gain
■
3dB typical Low Noise Figure
■
±0.7
dB gain flatness
■
Die size : 2.15 X 1.42 X 0.10 mm
On wafer measurements
Main Characteristics
Tamb. = 25°
C
Symbol
Fop
G
NF
Id
Parameter
Operating frequency range
Small signal Gain
Noise figure
Bias current
95
Min
1
12.5
14
4
dB
mA
Typ
Max
18
Unit
GHz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
DSCHA30235263 - 20 sep 05
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
