24.5-29.5GHz LNA VGA
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd= 5V
Symbol
Fop
G
∆G
Is
NF
Gctrl
P1dB
VSWRin
VSWRout
Vd
CHA2293
Parameter
Operating frequency range
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Noise figure with Vc=1.2V
Gain control range versus Vc
Output power at 1dB compression with Vc=1.2V
Input VSWR (1)
Output VSWR (1)
DC voltage
V5= Vd
Vc
Min
24.5
Typ
Max
29.5
Unit
GHz
dB
dB
dB
24
±1.5
50
3
15
12
4.0:1
2.0:1
5
[-0.7, 1.2]
35
160
3.5
dB
dB
dBm
-1.5
1.3
V
V
mA
mA
Id1
Id
Bias current (2) with Vc=1.2V
Bias current total (3) with Vc=1.2V
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjust to 35mA with Vg1 voltage.
(3) With Id1=35mA, adjust Vg voltage for a total drain current around 160mA.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Vc
Id
Vg
Pin
Ta
Tstg
Drain bias voltage
Control bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Parameter
Values
5.5
1.5
250
-2.0 to +0.4
+15
-40 to +85
-55 to +155
Unit
V
V
mA
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA22931201 -20-July-01
2/7
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
