CHA2293
24.5-29.5GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2293 is a high gain
four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
V5
Vd
Vg1
Vg
Vc
Typical on wafer measurements :Gain & NF
Main Features
•
•
•
•
•
•
Frequency range : 24.5-29.5GHz
3dB Noise Figure.
24dB gain
Gain control range: 15dB
Low DC power consumption, 160mA @ 5V
Chip size : 2.32 X 1.23 X 0.10 mm
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Gain (dB)
NF (dB)
24
25
26
27
28
29
30
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Parameter
Min
Typ
Max
Unit
Fop
G
NF
Gctrl
Id
Operating frequency range
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
24.5
24
3
15
150
29.5
GHz
dB
3.5
dB
dB
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22931201 -20-July-01
1/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
