CHA2194
Electrical Characteristics
Tamb = +25°C, Vd = +3,5V (On wafer)
Symbol
Fop
G
∆G
NF
VSWRin
VSWRout
IP3
P1dB
Id
Parameter
Operating frequency range
Gain (1)
Gain flatness (1)
Noise figure (1) (freq: 36-40 GHz)
Input VSWR (1)
Ouput VSWR (1)
3rd order intercept point
36-44GHz Low Noise Amplifier
Min
36
17
Typ
Max
44
Unit
Ghz
dB
19
±
0.5
3
2.5:1
2:5:1
20
±
1
4
3.0:1
3.0:1
dB
dB
dBm
dBm
75
mA
Output power at 1dB gain compression
Drain bias current (2)
8
10
45
(1) These values are representative of wafer measurements without bonding wire at the RF ports.
(2) This current is the typical value for low noise and low current consumption biasing :
Vd=3.5V , Vg12 and Vg3 not connected.
Absolute Maximum Ratings
(3)
Tamb = +25°C
Symbol
Vd
Vg
Id
Pin
Top
Tstg
Parameter
Drain bias voltage (5)
Vg12 and Vg3 max
Drain current
Maximum peak input power overdrive (4)
Operating temperature range
Storage temperature range
Values
4
+1
75
15
-40 to +85
-55 to +125
Unit
V
V
mA
dBm
°C
°C
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options page 9
Ref : DSCHA21942035 -04-Feb.-02
2/10
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
