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UM61512AK-20 参数 Datasheet PDF下载

UM61512AK-20图片预览
型号: UM61512AK-20
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×8位高速CMOS SRAM [64K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 16 页 / 165 K
品牌: UMC [ UMC CORPORATION ]
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UM61512A
Timing Waveforms (continued)
Write Cycle 2
(Chip Enable Controlled)
t
WC
Address
t
AW
t
CW5
CE1
t
AS1
(4)
t
WR3
CE2
(4)
t
CW5
t
WP2
WE
t
DW
t
DH
D
IN
t
WHZ7
D
OUT
Notes: 1.
2.
3.
4.
t
AS
is measured from the address valid to the beginning of Write.
A Write occurs during the overlap (t
WP
) of a low CE1, a high CE2 and a low WE .
t
WR
is measured from the earliest of CE1 or WE going high or CE2 going low to the end of the Write cycle.
If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low transition or after
the WE transition, outputs remain in a high impedance state.
5. t
CW
is measured from the later of CE going low or CE2 going high to the end of Write.
6. OE is continuously low. ( OE = V
IL
)
7. Transition is measured
±500mV
from steady state. This parameter is sampled and not 100% tested.
9