DIP Type
SMDType
SMD Type
DIP Type
MOSFET
IC
Transistors
MOSFET
IC
Product specification
IRF3205
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
10
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
2.5
I
D
= 107A
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
2.0
100
1.5
1.0
10
0.5
1
4
6
8
V DS = 25V
20µs PULSE WIDTH
10
12
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 4.
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
16
6000
V
GS
, Gate-to-Source Voltage (V)
5000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
I
D
=
62A
V
DS
= 44V
V
DS
= 27V
V
DS
= 11V
14
12
10
8
6
4
2
0
C, Capacitance(pF)
4000
Ciss
3000
2000
Coss
1000
Crss
0
1
10
100
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
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