DIP Type
SMDType
SMD Type
DIP Type
MOSFET
IC
Transistors
MOSFET
IC
Product specification
IRF3205
TO-220
3.30
±0.10
10.16
±0.20
ø3.18
±0.10
2.54
±0.20
(0.70)
●
Ultra Low On-Resistance
●
Dynamic dv/dt Rating
●
Fast Switching
●
Fully Avalanche Rated
15.80
±0.20
(1.00x45°)
MAX1.47
9.75
±0.30
0.80
±0.10
0
(3
0.35
±0.10
2
1
#1
3
0.50
–0.05
2.54TYP
[2.54
±0.20
]
+0.10
2.76
±0.20
2.54TYP
[2.54
±0.20
]
9.40
±0.20
1. GATE
2. DRAIN
3. SOURCE
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Continuous Drain Current, V
GS
@ 10V,T
C
= 25℃
Continuous Drain Current, V
GS
@ 10V,T
C
= 100℃
Pulsed Drain Current*1
Power Dissipation
Linear Derating Factor
Linear Derating Factor
Avalanche Current *1
Repetitive Avalanche Energy *1
Peak Diode Recovery dv/dt *2
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Operating Junction and Storage Temperature Range
V
GS
I
AR
E
AR
dv/dt
R
θJC
R
θCS
R
θJA
T
J
.T
STG
Symbol
I
D
I
D
I
DM
P
D
Rating
110
80
390
200
1.3
±
20
62
20
5
0.75 (Max)
0.5
62 (Max)
-55 to + 175
℃
℃/W
W
W/℃
V
A
mJ
V/ns
A
Unit
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 I
SD
≤
62A, d
i
/d
t
≤
207A/µs, V
DD
≤
V
(BR)DSS
,T
J
≤
175℃
http://www.twtysemi.com
sales@twtysemi.com
4.70
±0.20
4008-318-123
15.87
±0.20
●
Advanced Process Technology
6.68
±0.20
°
)
■
Features
1 of 4
TYSEMI [ TY Semiconductor Co., Ltd ]
