Product specification
DMG2307L
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Pulsed Drain Current (Note 5)
Steady
State
Steady
State
t≦10sec
Steady
State
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
Value
-30
±20
-2.5
-2.0
-3.8
-3.0
-4.6
-3.6
-3.1
-2.5
-20
Units
V
V
A
A
A
A
A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
P
D
R
θ
JA
T
J,
T
STG
Value
0.76
159
1.36
94
1.9
65.8
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5) t
≦
10sec
Thermal Resistance, Junction to Ambient (Note 5) t
≦
10sec
Operating and Storage Temperature Range
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
-
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
70
105
4.8
-0.75
371.3
51.3
45.9
17
4.0
8.2
0.9
1.2
4.8
7.3
22.4
13.4
Max
-
-1.0
±100
-3.0
90
134
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -2.5A
V
GS
= -4.5V, I
D
= -2.5A
V
DS
= -10V, I
D
= -2.5A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V,f = 1.0MHz
V
GS
= -10V, V
DS
= -15V,
I
D
= -3A
@T
c
= 25°C
V
DS
= -15V, V
GS
= -10V,
R
L
= 15Ω, R
G
= 6Ω,
I
D
= -1A
2. Device mounted on FR-4 PCB, with minimum recommended pad layout.
3. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
4. Short duration pulse test used to minimize self-heating effect.
5. Guaranteed by design. Not subject to product testing.
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