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DMG2307L-7 参数 Datasheet PDF下载

DMG2307L-7图片预览
型号: DMG2307L-7
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET的低导通电阻 [P-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance]
分类和应用:
文件页数/大小: 2 页 / 244 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号DMG2307L-7的Datasheet PDF文件第2页  
Product specification
DMG2307L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
90mΩ @ V
GS
= -10V
I
D
max
T
A
= 25°C
-3.8A
-3.1A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
-30V
134mΩ @ V
GS
= -4.5V
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Load Switch for Portable Devices
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.08 grams (approximate)
Ordering Information
(Note 3)
Part Number
DMG2307L-7
Notes:
1. No purposefully added lead.
Case
SOT-23
Packaging
3000Tape & Reel
Marking Information
http://www.twtysemi.com
sales@twtysemi.com
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