MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal
Transistor
Rating and Characteristic Curves
30
20
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
CAPACITANCE (pF)
Cibo
10
5.0
Cobo
1.0
0
25
50
75
100
125
150
175
200
0.1
1.0
10
50
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs Ambient Temperature
REVERSE VOLTS (V)
Fig.
2
Typical Capacitance
1000
1000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
T
A
= 125°C
h
FE
, DC CURRENT GAIN
100
100
T
A
= -25°C
T
A
= +25°C
10
10
V
CE
= 1.0V
1
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig.3 Typical DC Current Gain vs Collector Current
1
1
10
I
C
,
COLLECTOR CURRENT (mA)
100
Fig.
4
Gain Bandwidth Product vs. Collector Current
0.5
V
BE(ON)
,
BASE EMITTER VOLTAGE (V)
1.0
V
CE(SAT)
,
COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
I
C
I
B
= 10
0.4
T
A
= 25°C
0.3
T
A
= 150°C
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
CE
= 5V
T
A
= -50°C
T
A
= 25°C
T
A
= 150°C
0.1
T
A
= -50°C
0
1
10
100
1000
I
C
,
COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
Version : A10
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
