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MMBT2222A 参数 Datasheet PDF下载

MMBT2222A图片预览
型号: MMBT2222A
PDF下载: 下载PDF文件 查看货源
内容描述: 300MW, NPN小信号晶体管 [300mW, NPN Small Signal Transistor]
分类和应用: 晶体晶体管开关光电二极管IOT
文件页数/大小: 3 页 / 1477 K
品牌: TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
 浏览型号MMBT2222A的Datasheet PDF文件第2页浏览型号MMBT2222A的Datasheet PDF文件第3页  
MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal
Transistor
SOT-23
3 Collector
A
F
1 Base
2 Emitter
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
G
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : 1P
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
3.00
1.40
0.50
2.00
2.55
1.20
Unit (inch)
Min
0.110
0.047
0.012
0.071
0.089
0.035
Max
0.118
0.055
0.020
0.079
0.100
0.043
0.550 REF
0.022 REF
Ordering Information
Package
Part No.
Packing
3K / 7" Reel
3K / 7" Reel
Marking
1P
1P
SOT-23 MMBT2222A RF
SOT-23 MMBT2222A RFG
Suggested PAD Layout
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
(Note 1)
Symbol
P
D
V
CBO
V
CEO
V
EBO
I
C
RθJA
T
J
, T
STG
Value
300
75
40
6
600
417
-55 to + 150
Units
mW
V
V
V
mA
°C/W
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : A10