BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Rating and Characteristic Curves
FIG 1 Typical Forward Characteristics
Instantaneous Forward Current (mA)
300
275
250
225
200
175
150
125
100
75
50
25
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.01
0
20
40
60
80
100 120 140 160 180 200
o
100
FIG 2 Reverse Current as a function of junction
temperature.
Ta=25°C
Reverse Current (uA)
10
VR=75V
VR=75V
max
1
VR=25V
typ
typ
0.1
Instantaneous Forward Voltage (V)
Junction Temperature ( C)
FIG 4 Typical Junction Capacitance
0.8
FIG 3 Admissible Power Dissipation Curve
250
Ta=25°C
Power Dissipation (mW)
200
Junction Capacitance (pF)
0
25
50
75
100
125
150
175
0.6
150
0.4
100
50
0.2
0
0
0
2
4
6
8
10
12
14
16
Ambient Temperature (°C)
Reverse Voltage (V)
Version : A10
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
