BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
100 uA
1.0 mA
10 mA
50 mA
150 mA
75 V
25 V
0, f=1.0MHz
I
F
=I
R
=
10mA, Irr=0.1 x I
R
,
R
Symbol
I=
I
F
=
I
F
=
I
F
=
I
F
=
V
R
=
V
R
=
V
R
=
V
(BR)
Min
100
-
-
-
-
-
-
-
Max
-
0.715
0.855
1.000
1.250
1.00
0.03
1.5
4.0
Units
V
Forward Voltage
V
F
V
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
C
J
Trr
uA
pF
ns
Tape & Reel specification
TSC label
Top Cover Tape
Item
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
K
D
A
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
2.40 Max.
1.50 +0.10
178 ± 1
50 Min.
13.0 ± 0.5
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.10
0.6 Max.
8.30 Max.
14.4 Max.
Carieer Tape
Any Additional Label (If Required)
W1
A
ersion
: A10
D2
D1
Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
Version : A10
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
