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TGF2960-SD 参数 Datasheet PDF下载

TGF2960-SD图片预览
型号: TGF2960-SD
PDF下载: 下载PDF文件 查看货源
内容描述: 0.5瓦特的DC- 5GHz的包装HFET [0.5 Watt DC-5 GHz Packaged HFET]
分类和应用:
文件页数/大小: 21 页 / 1058 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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TGF2960-SD  
Table I  
Absolute Maximum Ratings 1/  
Symbol  
Parameter  
Value  
Notes  
Vd-Vg  
Vd  
Drain to Gate Voltage  
17 V  
9 V  
Drain Voltage  
2/  
Vg  
Gate Voltage Range  
Drain Current  
-5 to 0 V  
390 mA  
Id  
2/  
2/  
Ig  
Gate Current Range  
Input Continuous Wave Power  
-2.4 to 17.8 mA  
26 dBm  
Pin  
1/  
2/  
These ratings represent the maximum operable values for this device. Stresses beyond those listed  
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect  
device lifetime. These are stress ratings only, and functional operation of the device at these  
conditions is not implied.  
Combinations of supply voltage, supply current, input power, and output power shall not exceed the  
maximum power dissipation listed in Table IV.  
Table II  
Recommended Operating Conditions  
Symbol  
Parameter 1/  
Typical Value  
Vd  
Idq  
Id  
Drain Voltage  
Drain Current  
8 V  
100 mA  
130 mA  
-1.0 V  
Drain Current at Psat  
Gate Voltage  
Vg  
1/  
See assembly diagram for bias instructions.  
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2012 © Rev B  
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