TGF2960-SD
Evaluation Board Bill of Materials
Value for Freq (MHz)
Ref Des
Description
900
4.7 nH
22 pF
1900
1.2 nH
1.2 pF
2100
1.5 nH
1.2 pF
0.6 pF
5.8 mm
L1
C1
C2
D
0603 ACCU-L AVX Inductor
0603 ACCU-P AVX Capacitor
0603 ACCU-P AVX Capacitor
Physical Location for C2
0.7 pF
18.8 mm
0.6 pF
14.2 mm
Physical Location for C2 for maximum
power
D
λ
18.8 mm
14.2 mm
5.8 mm
36o@0.9
GHz
58o@1.9
GHz
26o@2.1
GHz
50 Ohm Transmission Line Length D
for maximum power
Physical Location for C2 for maximum
TOI
D
λ
18.8 mm
17.2 mm
9.6 mm
36o@0.9
GHz
70o@1.9
GHz
39o@2.1
GHz
50 Ohm Transmission Line Length D
for maximum TOI
L2, L3
L4
50 nH
--
0805 Inductor
0603 ACCU-L AVX Inductor
0603 Capacitor
1.2 nH
--
C3,C4
C5, C6
C7, C8
C9, C10
R1
150 pF
0.1 μF
0.01 μF
1000 pF
50 Ohms
0603 Capacitor
0603 Capacitor
0603 Capacitor
0805 1/8 Watt Resistor
R2
Q1
11 Ohms
3 Ohms
--
5.1 Ohms
0805 1/8 Watt Resistor
TriQuint TGF2960-SD Packaged FET
(PCB)
--
28 mil thick GETEK
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
19
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2012 © Rev B
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
