Product Data Sheet
TGF1350-SCC
S TANDARD
TYPICAL MODEL
PARAMETERS
DEVIATION
0.6
PARAMETER
Source resistance
Drain resistance
VALUE
5.62
4.48
4.68
UNIT
Ω
Ω
rs
rd
rg
0.4
0.5
Gate resistance
Ω
Transconductance
Drain–to–source resistance
Input resistance
52.32
224
1.30
6
40
1
mS
Ω
Ω
g m
rd s
ri
Gate–to–source capacitance
Gate–to–drain capacitance
Drain–to–source capacitance
Time constant
0.351
0.0159
0.0877
2.33
0.027
0.0037
0.0095
0.1
pF
pF
pF
ps
Cg s
Cg d
Cd s
τ
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
5
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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