Product Data Sheet
TGF1350-SCC
RF CHARACTERISTICS
P ARAMETER
Minimum noise figure
TES T CONDITIONS
10 GHz
18 GHz
10 GHz
TYP UNIT
1.5
NFMIN
GA
2.5
11
dB
Associated gain
18 GHz
7
O
VDS = 3 V, IDS = 15mA, TA = 25 C
DC CHARACTERISTICS
PARAMETER
V(BR)GDO Gate–drain breakdown voltage
TEST CONDITIONS
IGS = 1.0mA per mm
MIN
- 6
TYP MAX UNIT
V
V(BR)GSO Gate–source breakdown voltage
IGD = 1.0mA per mm
- 6
V
VGS(OFF) Gate–source cutoff (pinch–off)
voltage
VDS = VDSS
ID = 0.5mA per mm
VDS = 0.5 V to 3.5V**
VGS = 0
*
- 0.5 - 1.2 - 3
V
Zero–gate–voltage drain current
IDSS
30
40
50 100 mA
50 78 mA
at saturation
DC transconductance
GM
VDS = 0.5 V to VDSS
*
V
= - 0.25V
GS
TA = 25OC
*VDSS = VDS @ IDSS
**VDS for IDSS is the drain voltage between 0.5V and 3.5V at which drain current is highest.
EQUIVALENT SCHEMATIC
4
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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