TGA4823-2-SM
Table IV
Power Dissipation and Thermal Properties
Parameter
Test Conditions
Value
Notes
Maximum Power Dissipation
Tbaseplate = 70 °C
Pd = 3.17 W
1/ 2/
Tchannel = 150 °C
Tm = 1.0E+6 Hrs
Thermal Resistance, θjc
Vd = 8 V
θjc = 24.3 (°C/W)
Tchannel = 130 °C
Tm = 5.8E+6 Hrs
Id = 310 mA
Pd = 2.48 W
Thermal Resistance, θjc
Vd = 8 V
θjc = 24.3 (°C/W)
Tchannel = 127 °C
Tm = 7.6E+6 Hrs
Under RF Drive
Id = 350 mA
Pout = 26.5 dBm
Pd = 2.36 W
Mounting Temperature
Storage Temperature
Refer to Solder Reflow
Profiles (pp16)
-65 to 150 °C
1/
2/
For a median life of 1E+6 hours, Power Dissipation is limited to
Pd(max) = (150 °C – Tbase °C)/θjc.
Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
Median Lifetime (Tm) vs. Channel Temperature
4
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