Advance Product Datasheet
April 6, 2006
TGA4819-SL
TABLE III
RF CHARACTERIZATION TABLE
(T = 25 C, Nominal)
°
(VD = 8V, VCTRL = +A 1V, I = 310mA 5%, V
-0.3V)
±
≈
G
D
Parameter
Test Conditions
Typ
Units Notes
Small Signal Bandwidth
8
GHz
100 MHz – 4 GHz
6 GHz
20
19
17
12
Small Signal Gain
dB
1/ 2/
10 GHz
14 GHz
Input Return Loss
100 MHz – 14 GHz
100 MHz – 14 GHz
Midband
15
dB
dB
1/ 2/
1/ 2/
Output Return Loss
Small Signal AGC Range
Output Power @ P1dB
13
20
dB
2 GHz
25.5
dBm
3/
Note: Table IIILists the RF Characteristics of typical devices as determined by fixtured
measurements.
1/ Verified at package level RF test
2/ Package RF Test Bias: VD = 8V, VCTRL = +1V, adjust VG to achieve ID=310 mA
3/ Verified at die level on-wafer probe
3
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