T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in TriQuint’s 2.7 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 150 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
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