T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
T2G4003532-FL Gain DrEff. and PAE vs. Pout
T2G4003532-FL Gain DrEff. and PAE vs. Pout
1000 MHz, 100 usec 20%, Vds = 32V, Idq = 150 mA
2000 MHz, 100 usec 20%, Vds = 32V, Idq = 150 mA
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
Ω
ZS
ZL
=
=
4.23 - j2.49
8.61 + j3.85
Ω
Ω
= 1.96 + j3.03
ZS
Ω
ZL = 15.32 - j4.87
Gain
DrEff.
PAE
Gain
DrEff.
PAE
32
34
36
38
40
42
44
46
32
34
36
38
40
42
44
46
Pout [dBm]
Pout [dBm]
T2G4003532-FL Gain DrEff. and PAE vs. Pout
T2G4003532-FL Gain DrEff. and PAE vs. Pout
3000 MHz, 100 usec 20%, Vds = 32V, Idq = 150 mA
3500 MHz, 100 usec 20%, Vds = 32V, Idq = 150 mA
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
Ω
Ω
Ω
ZS
ZL
=
=
6.05 + j1.70
7.64 + j2.88
ZS = 15.13 - j9.33
ZL 7.13 + j2.82
=
Ω
Gain
DrEff.
PAE
Gain
DrEff.
PAE
32
34
36
38
40
42
44
46
32
34
36
38
40
42
44
46
Pout [dBm]
Pout [dBm]
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 6 of 13 -
© 2013 TriQuint
www.triquint.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
