T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Test Conditions
Value
4.9
Units
ºC/W
°C
Thermal Resistance (θJC)
Channel Temperature (TCH)
Notes:
DC at 85 °C Case
225
Thermal resistance measured to bottom of package, CW.
Median Lifetime
Maximum Channel Temperature
TBASE = 85°C, PD = 30 W
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
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