T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Des.
C1, C2, C3, C14
Value
10 pF
Qty Manufacturer
Part Number
600S100FT250XT
C1206C104K1RACTU
18121C105KAT2A
293D226X9035E2TE3
477KXM035M
4
2
2
1
1
1
2
1
1
1
ATC
C6, C12
C7, C13
C8
0.1 uF
Kemet
1.0 uF
AVX
22 uF
Vishay Sprague
Illinois Capacitor
Dielectric Labs
Coilcraft
C15
470 uF
C16
2400 pF
8.0 nH
C08BL242X_5SN_X0T
A03TJLB
L1, L2
R1
12.1 Ohms
1000 Ohms
97.6 Ohms
Vishay Dale
Vishay Dale
Vishay Dale
CRCW120612R1FKEA
CRCW12061K00FKEA
CRCW060397R6FKEA
R2
R3
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
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