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T1G6003028-FS 参数 Datasheet PDF下载

T1G6003028-FS图片预览
型号: T1G6003028-FS
PDF下载: 下载PDF文件 查看货源
内容描述: 30W , 28V ,特区的???? 6 GHz的氮化镓射频功率晶体管 [30W, 28V, DC – 6 GHz, GaN RF Power Transistor]
分类和应用: 晶体晶体管射频
文件页数/大小: 13 页 / 1305 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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T1G6003028-FS  
30W, 28V, DC – 6 GHz, GaN RF Power Transistor  
PIN Description  
Pin  
Symbol  
Description  
Drain voltage/ RF Output matched to 50 ohms; see Application Circuit on  
page 8 as an example.  
1
Vd/ RF OUT  
Gate voltage/ RF Input matched to 50 ohms; see Application Circuit on  
page 8 as an example  
2
3
Vg/RF IN  
Flange  
Source connected to ground; see Application Circuit on page 8 as an  
example.  
The T1G6003028-FS will be marked with the “3028” designator and a lot code marked below the part designator.  
The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the  
“ZZZ” is an auto-generated number.  
Data Sheet: Rev B 09/12/2012  
- 10 of 13 -  
Disclaimer: Subject to change without notice  
Connecting the Digital World to the Global Network®  
© 2012 TriQuint Semiconductor, Inc.