QPD2195
400ꢀW, 48ꢀV, 1.8-2.2 GHz GaN RF Power Transistor
RF Characterizationꢀ–ꢀPower-Tuned Load Pull Performance
Frequency
(MHz)
Source
Impedance
1.68 – j2.21
Load
Impedance
5.39 – j1.33
Gain @ P3dB
(dB)
P3dB
(dBm)
56.0
Drain Efficiency
(%)
60.5
1800
18.2
1840
1880
1990
2110
2140
2170
2200
1.34 – j2.45
5.39 – j1.33
18.1
56.1
62.7
1.44 - j2.82
1.51 – j3.72
2.00 – j5.57
2.48 – j6.14
3.07 - j6.71
3.38 – j7.21
5.54 - j0.11
5.79 + j1.48
3.89 + j3.09
3.67 + j3.42
3.67 + j3.42
3.11 + j3.04
17.8
17.4
17.2
16.7
16.6
16.6
56.2
56.0
56.0
56.0
56.1
55.9
60.9
60.4
60.5
59.5
61.8
58.5
Test conditions unless otherwise noted: VD = +48 V, IDQ = 720 mA, T = 25°C, Pulsed (10% duty cycle, 100 µs width)
RF Characterizationꢀ–ꢀEfficiency-Tuned Load Pull Performance
Frequency
(MHz)
Source
Impedance
1.68 – j2.21
Load
Impedance
1.79 – j1.97
Gain @ P3dB
(dB)
P3dB
(dBm)
53.5
Drain Efficiency
(%)
72.6
1800
20.3
1840
1880
1990
2110
2140
2170
2200
1.34 – j2.45
1.79 – j1.97
20.2
53.2
73.3
1.44 - j2.82
1.51 – j3.72
2.00 – j5.57
2.48 – j6.14
3.07 - j6.71
3.38 – j7.21
1.79 - j1.97
3.10 – j1.88
4.36 – j2.15
4.40 – j2.03
5.70 - j2.55
6.74 – j1.27
19.9
19.4
19.1
18.8
18.4
18.4
53.1
53.9
53.2
53.0
53.0
53.6
73.9
74.1
75.4
75.5
77.4
75.5
Test conditions unless otherwise noted: VD = +48 V, IDQ = 720 mA, T = 25°C, Pulsed (10% duty cycle, 100 µs width)
- 7 of 12 -
Rev. A
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